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| ZXTN25050DFH 50V, SOT23, NPN medium power transistor Summary BVCEX > 150V BVCEO > 50V BVECO > 5V IC(cont) = 4A VCE(sat) < 60mV @ 1A RCE(sat) = 40m PD = 1.25W Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. C B Features * * * * * * * * * * * High power dissipation SOT23 package High peak current High gain Low saturation voltage 150V forward blocking voltage 5V reverse blocking voltage MOSFET gate drivers Power switches Motor control DC fans DC-DC converters E E C B Pinout - top view Applications Ordering information Device ZXTN25050DFHTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 Device marking 017 Issue 3 - September 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com ZXTN25050DFH Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current (c) Base current Peak pulse current Power dissipation at Tamb =25C (a) Linear derating factor Power dissipation at Tamb =25C (b) Linear derating factor Power dissipation at Tamb =25C (c) Linear derating factor Power dissipation at Tamb =25C (d) Linear derating factor Operating and storage temperature range Symbol VCBO VCEX VCEO VECO VEBO IC IB ICM PD Limit 150 150 50 5 7 4 1 10 0.73 5.84 1.05 8.4 1.25 9.6 1.81 14.5 - 55 to 150 Unit V V V V V A A A W mW/C W mW/C W mW/C W mW/C C PD PD PD Tj, Tstg Thermal resistance Parameter Junction to ambient (a) Junction to ambient (b) Junction to ambient (c) Junction to ambient (d) Symbol R JA R JA R JA R JA Limit 171 119 100 69 Unit C/W C/W C/W C/W NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 3 - September 2006 (c) Zetex Semiconductors plc 2006 2 www.zetex.com ZXTN25050DFH Characteristics Issue 3 - September 2006 (c) Zetex Semiconductors plc 2006 3 www.zetex.com ZXTN25050DFH Electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Symbol Min. 150 150 50 5 5 7 Typ. 180 180 67 8 7.4 8.3 <1 <1 50 160 180 190 160 Base-emitter saturation voltage Base-emitter turn-on voltage VBE(sat) VBE(on) 300 240 20 Transition frequency Output capacitance Delay time Rise time Storage time Fall time fT COBO t(d) t(r) t(s) t(f) 970 870 450 410 40 200 12 65 111 429 140 300 s; duty cycle 2%. Max. Unit Conditions V V V V V V IC = 100 A IC = 100 A, RBE 1k -1V < VBE < 0.25V IC = 10mA (*) IE = 100 A, RBC 1k or 0.25V > VBC > -0.25V IE = 100 A, IE = 100 A VCB = 150V VCB = 150V, Tamb= 100C VCE = 150V; RBE 1k -1V < VBE < 0.25V VEB = 5.6V IC = 1A, IB = 100mA (*) IC = 1A, IB = 10mA (*) IC = 2A, IB = 40mA (*) IC = 3,5A, IB = 175mA (*) IC = 4A, IB = 400mA (*) IC = 4A, IB = 400mA (*) IC = 4A, VCE = 2V (*) IC = 10mA, VCE = 2V (*) IC = 1A, VCE = 2V (*) IC = 4A, VCE = 2V (*) MHz IC = 50mA, VCE = 10V f = 100MHz or or Collector-base breakdown voltage BVCBO Collector-emitter breakdown BVCEX voltage (forward blocking) Collector-emitter breakdown voltage (base open) Emitter-collector breakdown voltage (reverse blocking) Emitter-collector breakdown voltage (base open) Emitter-base breakdown voltage Collector cut-off current Collector-emitter cut-off current Emitter cut-off current Collector-emitter saturation voltage BVCEO BVECX BVECO BVEBO ICBO ICEX IEBO VCE(sat) 50 20 100 50 60 260 250 235 210 1070 970 900 nA A nA nA mV mV mV mV mV mV mV Static forward current transfer hFE ratio 20 pF ns ns ns ns VCB = 10V, f = 1MHz (*) VCC = 10V. IC = 1A, IB1 = IB2= 10mA. NOTES: (*) Measured under pulsed conditions. Pulse width Issue 3 - September 2006 (c) Zetex Semiconductors plc 2006 4 www.zetex.com ZXTN25050DFH Typical characteristics Issue 3 - September 2006 (c) Zetex Semiconductors plc 2006 5 www.zetex.com ZXTN25050DFH Package outline - SOT23 L H N D 3 leads G M B A C K F Dim. A B C D F G Millimeters Min. 2.67 1.20 0.37 0.085 Max. 3.05 1.40 1.10 0.53 0.15 Inches Min. 0.105 0.047 0.015 0.0034 Max. 0.120 0.055 0.043 0.021 0.0059 Dim. H K L M N - Millimeters Min. 0.33 0.01 2.10 0.45 Max. 0.51 0.10 2.50 0.64 - Inches Max. 0.013 0.0004 0.083 0.018 Max. 0.020 0.004 0.0985 0.025 - 0.95 NOM 0.0375 NOM 1.90 NOM 0.075 NOM Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Zetex GmbH Kustermann-park Balanstrae 59 D-81541 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 3 - September 2006 (c) Zetex Semiconductors plc 2006 6 www.zetex.com |
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